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Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB vs Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Overall score
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Report a bug
Reasons to consider
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
30
Around -7% lower latency
Faster reading speed, GB/s
20.3
8.8
Average value in the tests
Faster write speed, GB/s
17.3
5.6
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
30
28
Read speed, GB/s
8.8
20.3
Write speed, GB/s
5.6
17.3
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1344
3762
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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RAM 2
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