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Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A-PB 4GB
Samsung M471B1G73BH0-YK0 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A-PB 4GB vs Samsung M471B1G73BH0-YK0 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A-PB 4GB
Overall score
Samsung M471B1G73BH0-YK0 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A-PB 4GB
Report a bug
Below the latency in the PassMark tests, ns
31
43
Around 28% lower latency
Faster write speed, GB/s
7.7
7.6
Average value in the tests
Reasons to consider
Samsung M471B1G73BH0-YK0 8GB
Report a bug
Faster reading speed, GB/s
12.1
11.6
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A-PB 4GB
Samsung M471B1G73BH0-YK0 8GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
31
43
Read speed, GB/s
11.6
12.1
Write speed, GB/s
7.7
7.6
Memory bandwidth, mbps
12800
12800
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
Timings / Clock speed
9-9-9-24 / 1600 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
1972
2034
Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A-PB 4GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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