RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMT32GX4M4K4000C19 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Corsair CMT32GX4M4K4000C19 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Corsair CMT32GX4M4K4000C19 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
26
Around 8% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Corsair CMT32GX4M4K4000C19 8GB
Report a bug
Faster reading speed, GB/s
18.5
16
Average value in the tests
Faster write speed, GB/s
15.9
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMT32GX4M4K4000C19 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
26
Read speed, GB/s
16.0
18.5
Write speed, GB/s
12.5
15.9
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3794
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Corsair CMT32GX4M4K4000C19 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMT32GX4M4K4000C19 8GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology BL16G32C16U4R.16FE 16GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
Samsung M391B5673EH1-CH9 2GB
Kingston 9905630-066.A00G 16GB
Samsung M471B5273CH0-CH9 4GB
Panram International Corporation W4U2666P-8G 8GB
Kingston HX318C10FK/4 4GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Samsung M391B5673EH1-CH9 2GB
Transcend Information TS2GLH64V4B 16GB
Kingston 99U5429-014.A00LF 4GB
SK Hynix HMA851U6JJR6N-VK 4GB
Samsung M393B2G70BH0-CH9 16GB
AMD R948G2806U2S 8GB
Kingston K1N7HK-ELC 2GB
Samsung M393A2G40EB1-CRC 16GB
AMD R538G1601U2S-UO 8GB
SK Hynix HMA851S6DJR6N-XN 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston KF2933C17S4/16G 16GB
Report a bug
×
Bug description
Source link