RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology BL8G36C16U4W.M8FE1 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
30
Around 20% lower latency
Reasons to consider
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Report a bug
Faster reading speed, GB/s
19.6
16
Average value in the tests
Faster write speed, GB/s
15.5
12.5
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
30
Read speed, GB/s
16.0
19.6
Write speed, GB/s
12.5
15.5
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
3432
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB RAM comparisons
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Corsair VS1GB800D2 1GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 16ATF4G64AZ-3G2E1 32GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK64GX4M4A2133C13 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Maxsun MSD44G24Q0 4GB
Kingston ACR16D3LS1NGG/2G 2GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMK64GX4M4C3200C16 16GB
Kingston 99U5474-010.A00LF 2GB
Corsair CM4X16GE2666C16K4 16GB
Kingston 99U5471-030.A00LF 8GB
Kingston 9905624-009.A00G 8GB
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-3200C16-8GTZRN 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
Samsung M393A1G40DB1-CRC 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMW64GX4M4A2666C16 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Report a bug
×
Bug description
Source link