RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2666C15-4GVR 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-2666C15-4GVR 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-2666C15-4GVR 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
31
Around 23% lower latency
Faster write speed, GB/s
12.5
12.1
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-2666C15-4GVR 4GB
Report a bug
Faster reading speed, GB/s
16.9
16
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2666C15-4GVR 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
31
Read speed, GB/s
16.0
16.9
Write speed, GB/s
12.5
12.1
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
2577
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-2666C15-4GVR 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2666C15-4GVR 4GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMT64GX4M2C3600C18 32GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston MSI24D4S7S8MB-8 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Essencore Limited IM48GU48N28-GGGHM 8GB
AMD R5S38G1601U2S 8GB
A-DATA Technology AD4U240038G17-BHYA 8GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-3600C19-16GSXF 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Team Group Inc. TEAMGROUP-SD4-2666 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston KHX3200C16D4/4GX 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Samsung M378A2G43BB3-CWE 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Transcend Information JM2666HLB-16G 16GB
Kingston 9965525-140.A00LF 8GB
Kingston 99U5625-015.A00G 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9905734-018.A00G 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3200C15-8GTZKY 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology BL16G26C16S4B.16FD 16GB
Report a bug
×
Bug description
Source link