RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C16-16GTZKY 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3200C16-16GTZKY 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3200C16-16GTZKY 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3200C16-16GTZKY 16GB
Report a bug
Below the latency in the PassMark tests, ns
18
24
Around -33% lower latency
Faster reading speed, GB/s
20.7
16
Average value in the tests
Faster write speed, GB/s
16.4
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C16-16GTZKY 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
18
Read speed, GB/s
16.0
20.7
Write speed, GB/s
12.5
16.4
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3722
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3200C16-16GTZKY 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
TwinMOS 8DPT5MK8-TATP 2GB
Gloway International (HK) STK4U2400D17041C 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C16-16GTZKY 16GB
Kingston 9905403-061.A00LF 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Swissbit MEU25664D6BC2EP-30 2GB
Samsung M391A1K43BB1-CRC 8GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
A-DATA Technology AD5U48008G-B 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Corsair CMSX16GX4M2A2666C18 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Maxsun MSD48G30M3 8GB
Team Group Inc. UD5-6400 16GB
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
A-DATA Technology DQKD1A08 1GB
SK Hynix HMA81GR7AFR8N-UH 8GB
Kingston ACR512X64D3S13C9G 4GB
Mushkin MRA4S293MMMF32G 32GB
Kingston KHX2400C11D3/4GX 4GB
Avant Technology J644GU44J9266NQ 32GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
G Skill Intl F4-5066C20-8GVK 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMSX64GX4M4A2400C16 16GB
A-DATA Technology AD73I1C1674EV 4GB
Apacer Technology GD2.2229BH.001 16GB
Report a bug
×
Bug description
Source link