RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C16-8GTESC 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3600C16-8GTESC 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3600C16-8GTESC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
31
Around 23% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3600C16-8GTESC 8GB
Report a bug
Faster reading speed, GB/s
20.3
16
Average value in the tests
Faster write speed, GB/s
18.2
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C16-8GTESC 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
31
Read speed, GB/s
16.0
20.3
Write speed, GB/s
12.5
18.2
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3738
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3600C16-8GTESC 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT151R7TFR4C-H9 4GB
Crucial Technology CT4G4DFS824A.M8FB 4GB
Kingston 99U5474-028.A00LF 4GB
Kingston K821PJ-MIH 16GB
Corsair CML8GX3M2A1600C9 4GB
Corsair CMT16GX4M2C3466C16 8GB
Samsung M3 78T2863QZS-CF7 1GB
DSL Memory CIR-W4SUSS2408G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M2C3000C16 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C16-8GTESC 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMK16GX4M2D2400C14 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Avant Technology W641GU67J7240N8 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
SK Hynix DDR2 800 2G 2GB
Corsair CM4X16GD3200C16K2E 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
Samsung M393B2G70BH0-YK0 16GB
Corsair CMR32GX4M4C3600C18 8GB
Corsair CML8GX3M2A1866C9 4GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Kingston K821PJ-MIH 16GB
Report a bug
×
Bug description
Source link