RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 18ADF1G72PZ-2G1A1 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Micron Technology 18ADF1G72PZ-2G1A1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
32
Around 25% lower latency
Faster reading speed, GB/s
16
9.2
Average value in the tests
Faster write speed, GB/s
12.5
6.8
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Micron Technology 18ADF1G72PZ-2G1A1 8GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
32
Read speed, GB/s
16.0
9.2
Write speed, GB/s
12.5
6.8
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
2017
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-3600C16-8GTESC 8GB
Team Group Inc. Team-Elite-1333 4GB
G Skill Intl F4-3600C19-8GVSB 8GB
Samsung M471B1G73BH0-YK0 8GB
Corsair CMK32GX4M2F4000C19 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4SFD8266.M16FE 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CMD16GX4M2B2400C10 8GB
Kingston 99U5471-012.A00LF 4GB
Corsair CMR32GX4M2A2666C16 16GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Kingston 9905625-075.A00G 16GB
SK Hynix HMT351S6BFR8C-H9 4GB
Kingston 99U5734-036.A00G 16GB
JUHOR JHD2666U1908JG 8GB
A-DATA Technology AD5U48008G-B 8GB
Kingston 9905403-090.A01LF 4GB
Kingston KM0VW4-MID 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CMR16GX4M2E4266C19 8GB
Samsung M3 93T5750CZA-CE6 2GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMK16GX4M2B3000C15 8GB
Report a bug
×
Bug description
Source link