RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 8ATF51264AZ-2G1AY 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Micron Technology 8ATF51264AZ-2G1AY 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
28
Around 14% lower latency
Faster reading speed, GB/s
16
13.8
Average value in the tests
Faster write speed, GB/s
12.5
8.7
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Micron Technology 8ATF51264AZ-2G1AY 4GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
28
Read speed, GB/s
16.0
13.8
Write speed, GB/s
12.5
8.7
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
2443
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Micron Technology 8ATF51264AZ-2G1AY 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B1G73QH0-CK0 8GB
Kingston 9905713-001.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 8ATF51264AZ-2G1AY 4GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Corsair CMK16GX4M2Z3600C18 8GB
Samsung M393B2G70BH0-YK0 16GB
Kingston 9905700-013.A00G 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3300C16-16GTZ 16GB
A-DATA Technology AD73I1B1672EG 2GB
Crucial Technology CT8G4SFS8213.C8FDR1 8GB
Kingston 9905471-076.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N
AMD R5316G1609U2K 8GB
SK Hynix HMA82GS6CJR8N-V-V 16GB
Kingston KF3200C16D4/32GX 32GB
Corsair CMK32GX4M1A2400C16 32GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Apacer Technology 78.CAGPE.AUF0B 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston XW21KG-HYD-NX 8GB
Mushkin 991586 2GB
G Skill Intl F4-3000C15-8GTZB 8GB
Kingston 99U5584-007.A00LF 4GB
Crucial Technology BL8G32C16U4RL.M8FE1 8GB
Report a bug
×
Bug description
Source link