RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3200C16-16GSXFB 16GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs G Skill Intl F4-3200C16-16GSXFB 16GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
G Skill Intl F4-3200C16-16GSXFB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
G Skill Intl F4-3200C16-16GSXFB 16GB
Report a bug
Below the latency in the PassMark tests, ns
22
51
Around -132% lower latency
Faster reading speed, GB/s
18.5
15.6
Average value in the tests
Faster write speed, GB/s
14.2
11.8
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3200C16-16GSXFB 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
22
Read speed, GB/s
15.6
18.5
Write speed, GB/s
11.8
14.2
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2687
3392
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C16-16GSXFB 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3200C16-16GSXFB 16GB
Samsung M395T2863QZ4-CF76 1GB
Samsung M471A5244CB0-CTD 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Essencore Limited KD4AGU880-32A160U 16GB
Samsung M393B5270CH0-CH9 4GB
Apacer Technology 78.C1GMM.DFW0C 8GB
AMD AE34G1601U1 4GB
Crucial Technology CT8G4DFS8266.K8FB 8GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3333C16-8GVR 8GB
A-DATA Technology VDQVE1B16 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
PUSKILL DDR3 1600 8G 8GB
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB
Samsung M393B1G70BH0-YK0 8GB
Kingston KF3000C15D4/8GX 8GB
Samsung M393B1G70QH0-YK0 8GB
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Kingston 9965639-002.A01G 8GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston X3XCFP-HYA 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology BL16G32C16U4RL.M16FE 16GB
Kingston 9965433-034.A00LF 4GB
Transcend Information TS2GLH64V4B 16GB
Report a bug
×
Bug description
Source link