RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Kingmax Semiconductor GLLF62F-C6---------- 4GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
51
Around -122% lower latency
Faster reading speed, GB/s
17
15.6
Average value in the tests
Faster write speed, GB/s
13.2
11.8
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
23
Read speed, GB/s
15.6
17.0
Write speed, GB/s
11.8
13.2
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2687
2935
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
A-DATA Technology DDR4 2666 8GB
Crucial Technology BL16G36C16U4WL.M16FE 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 99U5712-009.A00G 16GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
SK Hynix HMA81GS6AFR8N-VK 8GB
Samsung M471B5773DH0-CH9 2GB
Mushkin 99[2/7/4]205[F/T] 8GB
Samsung M391B5673EH1-CH9 2GB
Essencore Limited KD4AGS88C-26N1900 16GB
Kingston 99U5428-018.A00LF 8GB
Crucial Technology BLT16G4D26BFT4.C16FD 16GB
Crucial Technology CT25664BA160B.C16F 2GB
Apacer Technology 78.CAGMR.40C0B 8GB
Apacer Technology 78.A1GC6.9H10C 2GB
Kingston 9905665-023.A00G 4GB
Mushkin 991988 (996988) 4GB
V-GEN D4S4GL32A16TS 4GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Mushkin MRA4S320GJJM16G 16GB
Kingston 2GB-DDR2 800Mhz 2GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Samsung M378B5173BH0-CH9 4GB
Kingston 99U5713-001.A00G 4GB
Report a bug
×
Bug description
Source link