Nanya Technology M2X4G64CB8HG9N-DG 4GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Micron Technology 16ATF2G64AZ-2G6E1 16GB

Overall score
star star star star star
Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Overall score
star star star star star
Micron Technology 16ATF2G64AZ-2G6E1 16GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Differences

  • Below the latency in the PassMark tests, ns
    36 left arrow 38
    Around 5% lower latency
  • Faster reading speed, GB/s
    15 left arrow 14.9
    Average value in the tests
  • Faster write speed, GB/s
    12.5 left arrow 9.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    36 left arrow 38
  • Read speed, GB/s
    14.9 left arrow 15.0
  • Write speed, GB/s
    9.5 left arrow 12.5
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2292 left arrow 3005
RAM Latency Calculator
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