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PNY Electronics PNY 2GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Compare
PNY Electronics PNY 2GB vs Samsung 18ASF1G72PDZ-2G1B1 16GB
Overall score
PNY Electronics PNY 2GB
Overall score
Samsung 18ASF1G72PDZ-2G1B1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
32
Around 16% lower latency
Faster reading speed, GB/s
13.8
9.8
Average value in the tests
Reasons to consider
Samsung 18ASF1G72PDZ-2G1B1 16GB
Report a bug
Faster write speed, GB/s
8.6
8.4
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
32
Read speed, GB/s
13.8
9.8
Write speed, GB/s
8.4
8.6
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2274
2271
PNY Electronics PNY 2GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
0 ns
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