Samsung 1600 CL10 Series 8GB
Lexar Co Limited LD4AS016G-H3200GST 16GB

Samsung 1600 CL10 Series 8GB vs Lexar Co Limited LD4AS016G-H3200GST 16GB

Overall score
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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Lexar Co Limited LD4AS016G-H3200GST 16GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

Differences

  • Below the latency in the PassMark tests, ns
    25 left arrow 44
    Around 43% lower latency
  • Faster reading speed, GB/s
    16.6 left arrow 16.1
    Average value in the tests
  • Faster write speed, GB/s
    14.2 left arrow 10.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Lexar Co Limited LD4AS016G-H3200GST 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 44
  • Read speed, GB/s
    16.1 left arrow 16.6
  • Write speed, GB/s
    10.1 left arrow 14.2
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 3146
RAM Latency Calculator
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