Samsung 1600 CL10 Series 8GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB

Samsung 1600 CL10 Series 8GB vs Patriot Memory (PDP Systems) 2666 C15 Series 4GB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Patriot Memory (PDP Systems) 2666 C15 Series 4GB

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

Differences

  • Below the latency in the PassMark tests, ns
    25 left arrow 31
    Around 19% lower latency
  • Faster reading speed, GB/s
    16.3 left arrow 16.1
    Average value in the tests
  • Faster write speed, GB/s
    12.8 left arrow 10.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 31
  • Read speed, GB/s
    16.1 left arrow 16.3
  • Write speed, GB/s
    10.1 left arrow 12.8
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 3084
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