Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB

Samsung DDR3 8GB 1600MHz 8GB vs Micron Technology 8ATF1G64AZ-3G2R1 8GB

Overall score
star star star star star
Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Overall score
star star star star star
Micron Technology 8ATF1G64AZ-3G2R1 8GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

Differences

  • Below the latency in the PassMark tests, ns
    31 left arrow 43
    Around -39% lower latency
  • Faster reading speed, GB/s
    16.9 left arrow 14.9
    Average value in the tests
  • Faster write speed, GB/s
    12.4 left arrow 9.6
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    43 left arrow 31
  • Read speed, GB/s
    14.9 left arrow 16.9
  • Write speed, GB/s
    9.6 left arrow 12.4
  • Memory bandwidth, mbps
    12800 left arrow no data
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow , 1.20000005, CAS Supported:
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow no data
  • Ranking PassMark (The more the better)
    2506 left arrow 3043
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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