RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
14.7
Average value in the tests
Faster write speed, GB/s
2,123.3
10.2
Average value in the tests
Reasons to consider
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Report a bug
Below the latency in the PassMark tests, ns
33
59
Around -79% lower latency
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
33
Read speed, GB/s
4,833.8
14.7
Write speed, GB/s
2,123.3
10.2
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
731
2764
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB RAM comparisons
A-DATA Technology AD4S3200316G22-BHYD 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T2863EHS-CF7 1GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Samsung M395T2863QZ4-CF76 1GB
SK Hynix HMA81GU6MFR8N-UH 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
SK Hynix HYMP112U64CP8-S6 1GB
Kingston 9905624-044.A00G 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-4400C19-32GTZR 32GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CM4X4GF3000C15K4 4GB
Corsair CMX4GX3M1A1333C9 4GB
Kingston 9965596-019.B01G 4GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-4266C19-8GTZKW 8GB
Kingston 9905471-002.A00LF 2GB
Corsair CMW16GX4M2Z2933C16 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMW64GX4M8C3466C16 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston KHX4000C19D4/8GX 8GB
Kingston ACR16D3LS1NGG/2G 2GB
Corsair CMK16GX4M2K3600C19 8GB
Samsung M378B5673EH1-CF8 2GB
Tanbassh 8G 2666MHZ 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Report a bug
×
Bug description
Source link