RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology CT16G4DFD8266.M16FH 16GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Crucial Technology CT16G4DFD8266.M16FH 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
17
Average value in the tests
Faster write speed, GB/s
2,622.0
13.7
Average value in the tests
Reasons to consider
Crucial Technology CT16G4DFD8266.M16FH 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
77
Around -221% lower latency
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
24
Read speed, GB/s
3,405.2
17.0
Write speed, GB/s
2,622.0
13.7
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
763
3230
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Crucial Technology CT16G4DFD8266.M16FH 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600
Samsung M393B1K70CH0-YH9 8GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
Elpida EBJ40EG8BFWB-JS-F 4GB
G Skill Intl F4-4400C16-8GTRS 8GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-2666C15-8GVR 8GB
Team Group Inc. Team-Elite-1333 4GB
G Skill Intl F4-2400C15-8GIS 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CM4X8GF2400C16S4 8GB
Samsung M3 78T5663RZ3-CE6 2GB
A-DATA Technology DDR4 3333 2OZ 4GB
AMD AE34G1601U1 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
SK Hynix HMT451S6BFR8A-PB 4GB
Mushkin MR[A/B]4U266GHHF8G 8GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3000C15-8GRRB 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-3200C15-8GTZKO 8GB
Kingston KHX2400C11D3/4GX 4GB
Corsair CMK16GX4M2Z3200C16 8GB
Report a bug
×
Bug description
Source link