RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
13.5
Average value in the tests
Faster write speed, GB/s
2,404.5
10.2
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Report a bug
Below the latency in the PassMark tests, ns
29
104
Around -259% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
29
Read speed, GB/s
3,192.0
13.5
Write speed, GB/s
2,404.5
10.2
Memory bandwidth, mbps
6400
19200
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
no data
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
786
2088
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB RAM comparisons
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
Kingston KF2933C17S4/16G 16GB
AMD R948G2806U2S 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT16G4DFRA32A.C16FP 16GB
Samsung M391B5673EH1-CH9 2GB
Kingston K000MD44U 4GB
Mushkin 991586 2GB
G Skill Intl F4-2800C15-16GRKD 16GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair MK16GX44A2666C16 4GB
Avant Technology F6451U64F9333G 4GB
Kingston 9905734-102.A00G 32GB
Kingston 99U5474-022.A00LF 2GB
Transcend Information TS2GSH64V1B 16GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Corsair CMR64GX4M8C3000C15 8GB
Kingston 9905471-002.A00LF 2GB
UMAX Technology D4-3200-16G-1024X8-L 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMK32GX4M2E3200C16 16GB
PNY Electronics PNY 2GB
AMD R744G2400U1S 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
SK Hynix HMA41GS6AFR8N-TF 8GB
Kingston ACR16D3LS1KBG/8G 8GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Report a bug
×
Bug description
Source link