RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
Compare
Samsung M4 70T2864QZ3-CF7 1GB vs G Skill Intl F4-4500C19-8GTZKKE 8GB
Overall score
Samsung M4 70T2864QZ3-CF7 1GB
Overall score
G Skill Intl F4-4500C19-8GTZKKE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T2864QZ3-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
23
Average value in the tests
Reasons to consider
G Skill Intl F4-4500C19-8GTZKKE 8GB
Report a bug
Below the latency in the PassMark tests, ns
15
74
Around -393% lower latency
Faster write speed, GB/s
21.0
2,201.1
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
74
15
Read speed, GB/s
4,178.4
23.0
Write speed, GB/s
2,201.1
21.0
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
508
4039
Samsung M4 70T2864QZ3-CF7 1GB RAM comparisons
Samsung M4 70T2864QZ3-CE6 1GB
Corsair CMD8GX4M2B4000C19 4GB
G Skill Intl F4-4500C19-8GTZKKE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C14-8GTZSK 8GB
Crucial Technology CT25664AA800.M16FG 2GB
G Skill Intl F4-3866C18-4GVK 4GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMD16GX4M2K4133C19 8GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-3200C14-8GTZKW 8GB
Kingston 9965516-112.A00LF 16GB
Corsair CMK16GX4M2K3600C19 8GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMD32GX4M4B3600C16 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
SK Hynix HYMP112U64CP8-Y5 1GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-4500C19-8GTZKKE 8GB
TwinMOS 9DNPBNZB-TATP 4GB
Crucial Technology BLT4G4D26AFTA.8FADG 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BLT16G4D26BFT4.C16FD 16GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology BLE16G4D32AEEA.K16FB 16GB
Report a bug
×
Bug description
Source link