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Samsung M4 70T5663CZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB
Compare
Samsung M4 70T5663CZ3-CE6 2GB vs Nanya Technology NT2GT64U8HD0BN-3C 2GB
Overall score
Samsung M4 70T5663CZ3-CE6 2GB
Overall score
Nanya Technology NT2GT64U8HD0BN-3C 2GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T5663CZ3-CE6 2GB
Report a bug
Reasons to consider
Nanya Technology NT2GT64U8HD0BN-3C 2GB
Report a bug
Below the latency in the PassMark tests, ns
61
69
Around -13% lower latency
Faster reading speed, GB/s
4
3
Average value in the tests
Faster write speed, GB/s
1,864.6
1,441.2
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M4 70T5663CZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB
Main characteristics
Memory type
DDR2
DDR2
Latency in PassMark, ns
69
61
Read speed, GB/s
3,325.1
4,521.7
Write speed, GB/s
1,441.2
1,864.6
Memory bandwidth, mbps
5300
5300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
Timings / Clock speed
5-5-5-15 / 667 MHz
5-5-5-15 / 667 MHz
Ranking PassMark (The more the better)
525
775
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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