Samsung M471B5173EB0-YK0 4GB
AMD R538G1601S2LS 8GB

Samsung M471B5173EB0-YK0 4GB vs AMD R538G1601S2LS 8GB

Overall score
star star star star star
Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

Overall score
star star star star star
AMD R538G1601S2LS 8GB

AMD R538G1601S2LS 8GB

Differences

  • Faster reading speed, GB/s
    13 left arrow 11.3
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    28 left arrow 44
    Around -57% lower latency

Specifications

Complete list of technical specifications
Samsung M471B5173EB0-YK0 4GB
AMD R538G1601S2LS 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    44 left arrow 28
  • Read speed, GB/s
    13.0 left arrow 11.3
  • Write speed, GB/s
    8.2 left arrow 8.2
  • Memory bandwidth, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2069 left arrow 1793
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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