Samsung M471B5273DH0-CH9 4GB
SK Hynix HMA81GU6DJR8N-WM 8GB

Samsung M471B5273DH0-CH9 4GB vs SK Hynix HMA81GU6DJR8N-WM 8GB

Overall score
star star star star star
Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Overall score
star star star star star
SK Hynix HMA81GU6DJR8N-WM 8GB

SK Hynix HMA81GU6DJR8N-WM 8GB

Differences

  • Below the latency in the PassMark tests, ns
    29 left arrow 47
    Around -62% lower latency
  • Faster reading speed, GB/s
    15.6 left arrow 9.3
    Average value in the tests
  • Faster write speed, GB/s
    12.9 left arrow 5.9
    Average value in the tests
  • Higher memory bandwidth, mbps
    23400 left arrow 10600
    Around 2.21 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5273DH0-CH9 4GB
SK Hynix HMA81GU6DJR8N-WM 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    47 left arrow 29
  • Read speed, GB/s
    9.3 left arrow 15.6
  • Write speed, GB/s
    5.9 left arrow 12.9
  • Memory bandwidth, mbps
    10600 left arrow 23400
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • Ranking PassMark (The more the better)
    1413 left arrow 3093
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons