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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
SK Hynix HMA81GU6DJR8N-WM 8GB
Compare
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs SK Hynix HMA81GU6DJR8N-WM 8GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Overall score
SK Hynix HMA81GU6DJR8N-WM 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
29
Around 24% lower latency
Faster reading speed, GB/s
17.7
15.6
Average value in the tests
Reasons to consider
SK Hynix HMA81GU6DJR8N-WM 8GB
Report a bug
Faster write speed, GB/s
12.9
12.7
Average value in the tests
Higher memory bandwidth, mbps
23400
21300
Around 1.1 higher bandwidth
Specifications
Complete list of technical specifications
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
SK Hynix HMA81GU6DJR8N-WM 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
22
29
Read speed, GB/s
17.7
15.6
Write speed, GB/s
12.7
12.9
Memory bandwidth, mbps
21300
23400
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
Ranking PassMark (The more the better)
3075
3093
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
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