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DDR2 RAM-Liste
Alle Speichermodule, sortiert nach steigender Latenz
№
Bandbreite
Latenzzeit, ns
Lesegeschwindigkeit, GB/s
Schreibgeschwindigkeit, GB/s
№
701
RAM
Walton Chaintech NU1G632-800P005 1GB
Latency
52
Read speed
4,458.6
Write speed
1,574.6
№
702
RAM
Elpida EBE21UE8AFSA-6E-F 2GB
Latency
52
Read speed
4,975.7
Write speed
1,956.0
№
703
RAM
Nanya Technology M2N2G64TU8HD0B-AC 2GB
Latency
52
Read speed
3,958.3
Write speed
1,387.6
№
704
RAM
Patriot Memory (PDP Systems) PDC24G6400ELK 2GB
Latency
52
Read speed
4,890.7
Write speed
2,478.6
№
705
RAM
A-DATA Technology ADOVE1B163BE 2GB
Latency
52
Read speed
4,497.2
Write speed
1,782.3
№
706
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-Y5 512MB
Latency
52
Read speed
3,998.8
Write speed
1,814.1
№
707
RAM
Smart Modular SG2567UDR212852HC 2GB
Latency
52
Read speed
5,345.3
Write speed
2,370.4
№
708
RAM
Samsung M3 78T6553BG0-CD5 512MB
Latency
52
Read speed
2,038.9
Write speed
1,838.6
№
709
RAM
A-DATA Technology DOPE1B163BE 2GB
Latency
52
Read speed
4,822.6
Write speed
1,859.9
№
710
RAM
Corsair CM2GSDS800D2 2GB
Latency
53
Read speed
5,173.2
Write speed
2,063.5
№
711
RAM
Hynix Semiconductor (Hyundai Electronics) ZION 667
Latency
53
Read speed
3,214.1
Write speed
1,246.4
№
712
RAM
Micron Technology 8HTF12864AY-667J3A 1GB
Latency
53
Read speed
4,394.5
Write speed
1,970.4
№
713
RAM
Corsair CM2X512-5400C4 512MB
Latency
53
Read speed
3,577.9
Write speed
1,852.9
№
714
RAM
G Skill Intl F2-5300CL4-2GBPQ 2GB
Latency
53
Read speed
4,292.6
Write speed
2,118.9
№
715
RAM
Hynix Semiconductor (Hyundai Electronics) ZION-8001GB-A134-R 1GB
Latency
53
Read speed
3,938.5
Write speed
1,481.9
№
716
RAM
G Skill Intl F2-5300CL5-4GBSQ 4GB
Latency
53
Read speed
3,922.4
Write speed
1,874.2
№
717
RAM
Kingston 9905316-025.A02LF 1GB
Latency
53
Read speed
4,568.7
Write speed
1,895.2
№
718
RAM
Smart Modular SG564568FG8NWJFMFR 2GB
Latency
53
Read speed
4,610.4
Write speed
1,888.5
№
719
RAM
Samsung M3 91T2863QZ3-CF7 1GB
Latency
53
Read speed
5,310.5
Write speed
2,223.5
№
720
RAM
A-DATA Technology EXTREME DDR2 800+ 2GB
Latency
53
Read speed
5,069.4
Write speed
2,375.6
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Letzte Vergleiche
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Kingston LV32D4S2S8HD-8 8GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
Samsung M471B5673FH0-CH9 2GB
Corsair CM4X8GD3000C15K4 8GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-3600C18-32GVK 32GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
OCMEMORY OCM3200CL16D-16GBN 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
MemxPro Inc. D4S8GHIOFFC 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
G Skill Intl F4-2400C16-8GRSB 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
SK Hynix HMA41GR7AFR8N-TF 8GB
SK Hynix HYMP512U64CP8-Y5 1GB
Crucial Technology BL8G32C16U4W.M8FE 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
SK Hynix HMA82GU6DJR8N-XN 16GB
Kingston KHX8500D2K2/2GN 1GB
Crucial Technology CT16G4SFRA266.M16FR 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Kingston 9905622-057.A00G 4GB
Corsair CMX4GX3M1A1333C9 4GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
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