RAM
DDR5
DDR4
DDR3
DDR2
Über die Website
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Über die Website
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
RAM 1 auswählen
RAM 2 auswählen
Vergleichen Sie
DDR2 RAM-Liste
Alle Speichermodule, sortiert nach steigender Latenz
№
Bandbreite
Latenzzeit, ns
Lesegeschwindigkeit, GB/s
Schreibgeschwindigkeit, GB/s
№
1821
RAM
Samsung M3 78T6553CZP-CD5 512MB
Latency
68
Read speed
3,013.5
Write speed
787.5
№
1822
RAM
A-DATA Technology DQVE1B16 2GB
Latency
68
Read speed
4,165.3
Write speed
2,285.0
№
1823
RAM
Micron Technology 8HTF12864HDY-800G1 1GB
Latency
68
Read speed
2,214.4
Write speed
1,264.4
№
1824
RAM
Micron Technology 8HTF12864HDZ-667H1 1GB
Latency
68
Read speed
1,932.7
Write speed
1,113.3
№
1825
RAM
Peak Electronics 256X64M-80E 2GB
Latency
68
Read speed
3,611.5
Write speed
2,455.5
№
1826
RAM
Nanya Technology M2Y2G64TU8HD4B-3C 2GB
Latency
68
Read speed
3,821.3
Write speed
2,032.4
№
1827
RAM
Southland Microsystems 40001949-02 1GB
Latency
68
Read speed
4,069.3
Write speed
2,475.5
№
1828
RAM
Kingston 9905316-131.A00LF 1GB
Latency
68
Read speed
3,552.6
Write speed
2,088.3
№
1829
RAM
Micron Technology 9HTF6472AY-667F1 512MB
Latency
68
Read speed
4,436.0
Write speed
2,745.9
№
1830
RAM
A-DATA Technology HYOVF1B163BZJ 2GB
Latency
68
Read speed
4,083.6
Write speed
1,688.8
№
1831
RAM
Kingston 9905320-018.A00LF 1GB
Latency
68
Read speed
2,364.5
Write speed
1,486.6
№
1832
RAM
Nanya Technology NT1GT64U8HA0BN-3C 1GB
Latency
68
Read speed
3,003.2
Write speed
1,320.0
№
1833
RAM
Micron Technology 16HTF12864AY-800D4 1GB
Latency
68
Read speed
3,371.8
Write speed
2,193.7
№
1834
RAM
Nanya Technology NT1GT64U88D0BY-AD 1GB
Latency
68
Read speed
4,540.8
Write speed
2,636.8
№
1835
RAM
Swissbit MEU25664D6BC2EP-30 2GB
Latency
68
Read speed
3,973.0
Write speed
1,944.9
№
1836
RAM
ProMos/Mosel Vitelic V916765G24QBFW-E4 1GB
Latency
68
Read speed
2,613.0
Write speed
1,256.2
№
1837
RAM
Kingmax Semiconductor KLCD48F-B8KW5 1GB
Latency
68
Read speed
2,996.5
Write speed
1,314.0
№
1838
RAM
AENEON AET760UD00-30DA98X 1GB
Latency
68
Read speed
3,612.0
Write speed
1,493.6
№
1839
RAM
Samsung M4 70T5663EH3-CE7 2GB
Latency
68
Read speed
4,819.6
Write speed
3,450.1
№
1840
RAM
Samsung M4 70T5663FB3-CF7 2GB
Latency
68
Read speed
3,000.1
Write speed
1,464.4
«
89
90
91
92
93
94
»
Letzte Vergleiche
Samsung M471B5173QH0-YK0 4GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
SK Hynix HMT31GR7BFR4C-H9 8GB
Kingston 9965643-002.A01G 4GB
Kingston 99U5469-045.A00LF 4GB
Panram International Corporation W4U2400PS-8G 8GB
A-DATA Technology VDQVE1B16 2GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Kingston KHX2133C11D3/4GX 4GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
A-DATA Technology DDR2 800G 2GB
Samsung M391A1K43BB1-CRC 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
Corsair CM4X16GE2400C16S4 16GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4SFS8213.C8FDR1 8GB
Kingston 99U5474-010.A00LF 2GB
Corsair CMW16GX4M2Z3200C16 8GB
Kingston 99U5429-007.A00LF 2GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
AMD R538G1601U2S-UO 8GB
Crucial Technology BLS4G4D240FSA.M8FADM 4GB
Kingston HP32D4S2S1ME-4 4GB
Corsair CMK16GX4M4C3000C16 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
Einen Fehler melden
×
Bug description
Source link
Русский 
English 
Español 
Português 
Français 
Italiano 
Polski 
中文 
日本語 
