RAM
DDR5
DDR4
DDR3
DDR2
Über die Website
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Über die Website
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
RAM 1 auswählen
RAM 2 auswählen
Vergleichen Sie
DDR2 RAM-Liste
Alle Speichermodule, sortiert nach steigender Latenz
№
Bandbreite
Latenzzeit, ns
Lesegeschwindigkeit, GB/s
Schreibgeschwindigkeit, GB/s
№
1941
RAM
Kreton Corporation 51623010G681351465 2GB
Latency
70
Read speed
2,949.3
Write speed
1,685.9
№
1942
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512S64BP8-Y5 1GB
Latency
70
Read speed
2,928.8
Write speed
1,286.6
№
1943
RAM
Elpida EBE10UE8AFFA-8G-F 1GB
Latency
70
Read speed
4,650.1
Write speed
2,606.6
№
1944
RAM
Kreton Corporation 515233204581451400 1GB
Latency
70
Read speed
3,505.8
Write speed
1,446.3
№
1945
RAM
Samsung 36HTF51272PZ-800H1 4GB
Latency
70
Read speed
4,318.9
Write speed
2,924.1
№
1946
RAM
Elpida EBE11FD8AGFD-6E-E 1GB
Latency
70
Read speed
2,298.7
Write speed
1,392.8
№
1947
RAM
Samsung 99P5471-013.A00LF 4GB
Latency
70
Read speed
4,740.9
Write speed
3,161.1
№
1948
RAM
Samsung M3 78T2953GZ3-CE6 1GB
Latency
70
Read speed
3,174.9
Write speed
1,672.9
№
1949
RAM
Nanya Technology M2N1G64TUH8D6F-3C 1GB
Latency
70
Read speed
2,089.5
Write speed
1,551.1
№
1950
RAM
A-DATA Technology ADOVF1A083FE 1GB
Latency
70
Read speed
3,101.5
Write speed
1,349.3
№
1951
RAM
A-DATA Technology DOVE1B163BE 2GB
Latency
71
Read speed
2,957.4
Write speed
1,114.9
№
1952
RAM
Nanya Technology M2Y1G64TU88D4B-AC 1GB
Latency
71
Read speed
3,244.6
Write speed
1,289.4
№
1953
RAM
Peak Electronics 128X64M-80E 1GB
Latency
71
Read speed
3,200.0
Write speed
1,895.7
№
1954
RAM
A-DATA Technology HYOPE1B163BZ 2GB
Latency
71
Read speed
2,466.3
Write speed
978.7
№
1955
RAM
Micron Technology 16HTF12864AY-667D4 1GB
Latency
71
Read speed
2,773.9
Write speed
1,529.6
№
1956
RAM
ProMos/Mosel Vitelic V916764K24QAFW-F5 512MB
Latency
71
Read speed
4,437.4
Write speed
2,939.6
№
1957
RAM
Micron Technology 16HTF12864HY-667B3 1GB
Latency
71
Read speed
2,668.0
Write speed
1,337.6
№
1958
RAM
Micron Technology 16HTF12864HY-667F1 1GB
Latency
71
Read speed
2,103.3
Write speed
1,261.5
№
1959
RAM
ProMos/Mosel Vitelic V916765G24QCFW-G6 1GB
Latency
71
Read speed
3,362.8
Write speed
1,944.9
№
1960
RAM
Micron Technology 16HTF25664AY800J3A 2GB
Latency
71
Read speed
3,498.8
Write speed
1,980.0
«
95
96
97
98
99
100
»
Letzte Vergleiche
G Skill Intl F4-3600C19-16GSXKB 16GB
G Skill Intl F4-4266C19-8GTRS 8GB
A-DATA Technology DQKD1A08 1GB
Samsung M391A2K43BB1-CTD 16GB
Kingston 9965433-034.A00LF 4GB
Crucial Technology CT4G4DFS8266.M8FG 4GB
Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-2133C15-8GRK 8GB
Kingston 9965525-155.A00LF 8GB
JUHOR JHD2666U1908JG 8GB
Samsung M393B2G70BH0-CH9 16GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Avant Technology J642GU42J9266N4 16GB
SK Hynix HMT325S6CFR8C-H9 2GB
Kingston 9905630-005.A00G 8GB
Qimonda 64T128020EDL2.5C2 1GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
Kingston KF3600C17D4/8GX 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3000C15-4GTZB 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4266C19-8GTZKW 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3200C14-8GTZSK 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFD8213.C16FAR2 8GB
Einen Fehler melden
×
Bug description
Source link
Русский 
English 
Español 
Português 
Français 
Italiano 
Polski 
中文 
日本語 
