RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Samsung 18ASF1G72PDZ-2G1B1 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
Samsung 18ASF1G72PDZ-2G1B1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Reasons to consider
Samsung 18ASF1G72PDZ-2G1B1 16GB
Report a bug
Below the latency in the PassMark tests, ns
32
65
Around -103% lower latency
Faster reading speed, GB/s
9.8
3
Average value in the tests
Faster write speed, GB/s
8.6
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
32
Read speed, GB/s
3,580.8
9.8
Write speed, GB/s
1,592.0
8.6
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
572
2271
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Samsung 18ASF1G72PDZ-2G1B1 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Samsung 18ASF1G72PDZ-2G1B1 16GB
Kingston 9965662-016.A00G 16GB
Avant Technology J642GU42J7240N2 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
Micron Technology 18HTF12872AY-800F1 1GB
Super Talent F24EB8GS 8GB
Kingston ACR16D3LS1KNG/4G 4GB
Corsair CMR16GX4M2C3600C18 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M378A1G43EB1-CPB 8GB
Kingston 99U5403-492.A00LF 8GB
Crucial Technology BLS8G4S240FSD.16FAR 8GB
Samsung M378A1G43DB0-CPB 8GB
Avant Technology W642GU42J7240N8 16GB
G Skill Intl F3-1333C9-4GIS 4GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Samsung M378A5143EB1-CPB 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3400C16-16GVK 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMSX32GX4M2A2933C19 16GB
Kingston 9965525-155.A00LF 8GB
Kingmax Semiconductor GLLF62F-D8---------- 4GB
Kingston KHX1600C9D3/8G 8GB
Panram International Corporation PUD43000C154G4NJW 4GB
Report a bug
×
Bug description
Source link