RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
24
Around -4% lower latency
Faster reading speed, GB/s
16.7
16
Average value in the tests
Faster write speed, GB/s
13.2
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
23
Read speed, GB/s
16.0
16.7
Write speed, GB/s
12.5
13.2
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 12 14 15
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3025
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB RAM comparisons
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Kingston 99U5474-010.A00LF 2GB
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
A-DATA Technology DDR3 1866 2OZ 4GB
Kingmax Semiconductor GLNH23F-18---------- 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-4400C18-8GTRG 8GB
A-DATA Technology DDR3 1600 4GB
Corsair CMW64GX4M4C3466C16 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Samsung M393A2K40CB1-CRC 16GB
A-DATA Technology DDR2 800G 2GB
Corsair CMSX8GX4M1A2400C16 8GB
AMD AE34G2139U2 4GB
G Skill Intl F4-3000C16-16GVRB 16GB
AMD R5316G1609U2K 8GB
Crucial Technology CT8G4DFS6266.M4FB 8GB
Corsair CMK64GX4M2C3200C16 32GB
Corsair CMK64GX5M2B5200C40 32GB
Samsung M471B5173BH0-CK0 4GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL32G32C16S4B.M16FB1 32GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston XVTW4H-MIE 32GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
Report a bug
×
Bug description
Source link