RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
31
Around 23% lower latency
Faster reading speed, GB/s
16
15.7
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Report a bug
Faster write speed, GB/s
13.3
12.5
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
31
Read speed, GB/s
16.0
15.7
Write speed, GB/s
12.5
13.3
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
3318
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Chun Well Technology Holding Limited MD4U1632161DCW 16G
Samsung M393B1G70QH0-YK0 8GB
Corsair CMT32GX4M4C3200C14 8GB
Samsung M386B4G70DM0-CMA4 32GB
G Skill Intl F4-3200C14-8GTZRX 8GB
Kingston 99U5474-023.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
Apacer Technology 78.01G86.9H50C 1GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
Kingston ACR256X64D3S1333C9 2GB
SK Hynix GKE800UD102408-2133 8GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
Kingston 9905471-001.A01LF 2GB
Wilk Elektronik S.A. IR2400D464L17S/8G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4SFS832A.M8FE 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Apacer Technology D12.2324WT.001 8GB
Kingston KHX2133C11D3/4GX 4GB
Kingston KF2666C15S4/16G 16GB
Kingston 99U5403-036.A00G 4GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
SK Hynix HMT151R7TFR4C-H9 4GB
Crucial Technology CT16G4SFS832A.M8FB 16GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Report a bug
×
Bug description
Source link