RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CM4X8GF2133C15S2 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Corsair CM4X8GF2133C15S2 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Corsair CM4X8GF2133C15S2 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
31
Around 23% lower latency
Faster reading speed, GB/s
16
14.5
Average value in the tests
Faster write speed, GB/s
12.5
9.1
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Corsair CM4X8GF2133C15S2 8GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CM4X8GF2133C15S2 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
31
Read speed, GB/s
16.0
14.5
Write speed, GB/s
12.5
9.1
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
2517
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Corsair CM4X8GF2133C15S2 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 16JTF51264HZ-1G6M1 4GB
Golden Empire CL15-17-17 D4-3000 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Kingston 9965662-015.A00G 16GB
Kingston KHX318C10FR/8G 8GB
G Skill Intl F4-3600C16-8GTESC 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CM4X8GF2133C15S2 8GB
Peak Electronics 256X64M-67E 2GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
Kingston 9905403-011.A03LF 2GB
Samsung M378A5244BB0-CRC 4GB
Samsung M3 93T5750CZA-CE6 2GB
SK Hynix HMA82GR7MFR8N-UH 16GB
A-DATA Technology VDQVE1B16 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Kingston 9905471-002.A00LF 2GB
Kingston 9965669-027.A00G 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMN32GX4M2Z3600C16 16GB
SK Hynix HYMP125S64CP8-S6 2GB
A-DATA Technology DDR4 3200 8GB
Samsung M393B2G70BH0-CH9 16GB
A-DATA Technology AO1P24HC8T1-BQXS 8GB
Kingston 9905471-001.A01LF 2GB
Kingston 99U5584-018.A00LF 4GB
Report a bug
×
Bug description
Source link