RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMW128GX4M4D3600C18 32GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Corsair CMW128GX4M4D3600C18 32GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Corsair CMW128GX4M4D3600C18 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
35
Around 31% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Corsair CMW128GX4M4D3600C18 32GB
Report a bug
Faster reading speed, GB/s
16.5
16
Average value in the tests
Faster write speed, GB/s
14.7
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMW128GX4M4D3600C18 32GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
35
Read speed, GB/s
16.0
16.5
Write speed, GB/s
12.5
14.7
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3534
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Corsair CMW128GX4M4D3600C18 32GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMW128GX4M4D3600C18 32GB
Corsair CMD16GX3M2A1866C9 8GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
Kingston 99U5471-012.A00LF 4GB
Panram International Corporation PUD43000C158G2NJK 8GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3200C14-32GTRG 32GB
SK Hynix HMT451U7BFR8C-RD 4GB
Samsung M471A5143EB1-CRC 4GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Samsung M393A2G40EB1-CPB 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology CT16G4DFRA32A.C8FE 16GB
Kingston ACR16D3LS1KNG/4G 4GB
Corsair CMWX16GC3200C16W4 16GB
Samsung 1600 CL10 Series 8GB
Smart Modular SMU4WEC8C1K0464FCG 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Kingmax Semiconductor GSJF62F-DA---------- 4GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-4000C18-8GVK 8GB
Mushkin 991679ES 996679ES 2GB
Corsair CMD64GX4M4C3000C15 16GB
Samsung M393B2G70BH0-YK0 16GB
Gloway International (HK) STK4U2400D17082C 8GB
TwinMOS 8DPT5MK8-TATP 2GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
Report a bug
×
Bug description
Source link