RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3000C14-16GVK 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3000C14-16GVK 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3000C14-16GVK 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
30
Around 20% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3000C14-16GVK 16GB
Report a bug
Faster reading speed, GB/s
17
16
Average value in the tests
Faster write speed, GB/s
13.3
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3000C14-16GVK 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
30
Read speed, GB/s
16.0
17.0
Write speed, GB/s
12.5
13.3
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3428
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3000C14-16GVK 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3600C18-8GTZN 8GB
Samsung M393B5170FH0-CH9 4GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK32GX4M4K4333C19 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-4000C16-8GVK 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Kingston 9965589-033.D00G 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMSX8GX4M1A2666C18 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C16-16GTZRC 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMD16GX4M4B3200C15 4GB
Samsung M378B5673EH1-CF8 2GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
Samsung M471A2G43AB2-CWE 16GB
G Skill Intl F5-6400J3239G16G 16GB
Kingston KHX3200C20S4/16G 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Gloway International (HK) STK4U2400D15082C 8GB
Report a bug
×
Bug description
Source link