RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gloway International (HK) STK4U2400D15082C 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Gloway International (HK) STK4U2400D15082C 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Gloway International (HK) STK4U2400D15082C 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
80
Around 70% lower latency
Faster reading speed, GB/s
16
14.7
Average value in the tests
Faster write speed, GB/s
12.5
8.1
Average value in the tests
Reasons to consider
Gloway International (HK) STK4U2400D15082C 8GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gloway International (HK) STK4U2400D15082C 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
80
Read speed, GB/s
16.0
14.7
Write speed, GB/s
12.5
8.1
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
1775
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Gloway International (HK) STK4U2400D15082C 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5173DB0-YK0 4GB
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
G Skill Intl F3-1866C8-8GTX 8GB
V-Color Technology Inc. TL48G30S8KGRGB15 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMK16GX4M2C3000C16 8GB
Kingston 99U5403-036.A00G 4GB
Kingston KTD3KX-HYA 8GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-2933C16-16GFX 16GB
A-DATA Technology DQVE1908 512MB
Corsair CMK16GX4M2E4333C19 8GB
Patriot Memory (PDP Systems) PSD38G16002S 8GB
G Skill Intl F4-4000C18-8GTZ 8GB
A-DATA Technology DDR2 800G 2GB
Crucial Technology CT16G4DFD824A.C16FHD 16GB
Kingston KTC1G-UDIMM 1GB
G Skill Intl F4-3600C16-8GTESC 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Apacer Technology 78.C1GS7.AUC0B 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT8G4SFS8266.C8FE 8GB
Apacer Technology 78.B1GET.AU00C 4GB
G Skill Intl F4-4400C19-16GTZR 16GB
TwinMOS 8DHE3MN8-HATP 2GB
JUHOR JHD2666U1916JG 16GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
EVGA 8GX-D4-3200-MR 8GB
Report a bug
×
Bug description
Source link