RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 72ASS4G72LZ-2G1A1 32GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Micron Technology 72ASS4G72LZ-2G1A1 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
39
Around 38% lower latency
Faster reading speed, GB/s
16
8.8
Average value in the tests
Faster write speed, GB/s
12.5
7.7
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Micron Technology 72ASS4G72LZ-2G1A1 32GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
39
Read speed, GB/s
16.0
8.8
Write speed, GB/s
12.5
7.7
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
2083
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-14900CL9-4GBSR 4GB
Corsair CMK32GX4M2D3200C16 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-3600C19-16GSXK 16GB
Strontium EVMT8G1600U86S 8GB
Mushkin 99[2/7/4]190F 4GB
Kingston KVR16N11/8-SP 8GB
SK Hynix HMA851S6AFR6N-UH 4GB
Samsung M393B1K70CH0-YH9 8GB
Crucial Technology CT16G4DFD824A.M16FD 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT16G4DFD824A.C16FHD 16GB
Samsung M395T2863QZ4-CF76 1GB
Mushkin MRA4S300GJJM16G 16GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C19-8GSXF 8GB
Samsung M471B5273DH0-CH9 4GB
Kingston KHX2400C15D4/4G 4GB
A-DATA Technology DDR3L 1333G 4GB
Kingston KHX3733C19D4/8GX 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-3200C15-8GVR 8GB
Samsung M393B5170EH1-CH9 4GB
Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Lenovo LMKU8G68AHFHD-32A 8GB
Report a bug
×
Bug description
Source link