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Kingston KVR533D2N4 512MB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
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Kingston KVR533D2N4 512MB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Overall score
Kingston KVR533D2N4 512MB
Overall score
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston KVR533D2N4 512MB
Report a bug
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
75
Around -213% lower latency
Faster reading speed, GB/s
15.6
1
Average value in the tests
Faster write speed, GB/s
12.1
1,672.1
Average value in the tests
Higher memory bandwidth, mbps
19200
4200
Around 4.57 higher bandwidth
Specifications
Complete list of technical specifications
Kingston KVR533D2N4 512MB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
75
24
Read speed, GB/s
1,943.5
15.6
Write speed, GB/s
1,672.1
12.1
Memory bandwidth, mbps
4200
19200
Other
Description
PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
4-4-4-12 / 533 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
301
2852
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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