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Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3600C19-8GSXKB 8GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs G Skill Intl F4-3600C19-8GSXKB 8GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
G Skill Intl F4-3600C19-8GSXKB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
G Skill Intl F4-3600C19-8GSXKB 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
51
Around -82% lower latency
Faster reading speed, GB/s
18.6
15.6
Average value in the tests
Faster write speed, GB/s
15.4
11.8
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3600C19-8GSXKB 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
28
Read speed, GB/s
15.6
18.6
Write speed, GB/s
11.8
15.4
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2687
3519
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C19-8GSXKB 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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0 ns
Latest comparisons
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G Skill Intl F4-4133C19-8GTZRF 8GB
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