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Mushkin 991679ES 996679ES 2GB
Samsung M378A5244CB0-CWE 4GB
Compare
Mushkin 991679ES 996679ES 2GB vs Samsung M378A5244CB0-CWE 4GB
Overall score
Mushkin 991679ES 996679ES 2GB
Overall score
Samsung M378A5244CB0-CWE 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Mushkin 991679ES 996679ES 2GB
Report a bug
Reasons to consider
Samsung M378A5244CB0-CWE 4GB
Report a bug
Below the latency in the PassMark tests, ns
34
63
Around -85% lower latency
Faster reading speed, GB/s
16.7
7.7
Average value in the tests
Faster write speed, GB/s
12.3
5.0
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
Mushkin 991679ES 996679ES 2GB
Samsung M378A5244CB0-CWE 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
63
34
Read speed, GB/s
7.7
16.7
Write speed, GB/s
5.0
12.3
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1130
2584
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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