RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Compare
Nanya Technology NT512T64U88B0BY-3C 512MB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Overall score
Nanya Technology NT512T64U88B0BY-3C 512MB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT512T64U88B0BY-3C 512MB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Report a bug
Below the latency in the PassMark tests, ns
41
71
Around -73% lower latency
Faster reading speed, GB/s
7.8
2
Average value in the tests
Faster write speed, GB/s
6.1
1,322.6
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
71
41
Read speed, GB/s
2,831.6
7.8
Write speed, GB/s
1,322.6
6.1
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
399
1512
Nanya Technology NT512T64U88B0BY-3C 512MB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB RAM comparisons
Samsung M3 78T5663RZ3-CE6 2GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT512T64U88B0BY-3C 512MB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
AMD R538G1601U2S-UO 8GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
Corsair CM2X1024-6400C4 1GB
Kingston KHX6400S2LL/2G 2GB
Samsung M3 78T2863QZS-CF7 1GB
Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
Kingston 9965525-140.A00LF 8GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Kingston 9905403-444.A00LF 4GB
Corsair CM4X16GD3200C16K2E 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS16G4D26BFSB.16FBR 16GB
Mushkin 991586 2GB
G Skill Intl F4-3000C15-8GRBB 8GB
Crucial Technology CT25664BA160B.C16F 2GB
Heoriady M378B5273DH0-CK0 4GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingston ACR32D4U2S8HD-8X 8GB
Kingston 99U5584-005.A00LF 4GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMW16GX4M2C3000C15 8GB
Kingston 9905403-061.A00LF 2GB
Corsair CMD16GX4M2B3866C18 8GB
Kingston KHX2133C11D3/4GX 4GB
Kingston 9905700-024.A00G 8GB
Report a bug
×
Bug description
Source link