RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C18-16GRS 16GB
Compare
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs G Skill Intl F4-3200C18-16GRS 16GB
Overall score
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Overall score
G Skill Intl F4-3200C18-16GRS 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Report a bug
Below the latency in the PassMark tests, ns
35
40
Around 13% lower latency
Reasons to consider
G Skill Intl F4-3200C18-16GRS 16GB
Report a bug
Faster reading speed, GB/s
16
13.7
Average value in the tests
Faster write speed, GB/s
14.0
9.6
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C18-16GRS 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
35
40
Read speed, GB/s
13.7
16.0
Write speed, GB/s
9.6
14.0
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2312
2965
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM comparisons
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB
G Skill Intl F4-3200C18-16GRS 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3000C15-4GRK 4GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
Kingston 9905403-134.A00LF 2GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3200C15-8GTZSW 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology CT8G4DFS8266.C8FN 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston HP26D4U6S8ME-8X 8GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-2666C19-16GIS 16GB
Samsung M3 78T5663RZ3-CF7 2GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
Ramos Technology EWB8GB681CA3-16IC 8GB
Kingston KHX21334D4/8G 8GB
Kingston ACR256X64D3S1333C9 2GB
UMAX Technology 16GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M471A2K43CB1-CRCR 16GB
G Skill Intl F4-3200C14-8GTZSK 8GB
G Skill Intl F4-3200C16-8GFX 8GB
Samsung M471B5173DB0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
Kingston 99U5403-036.A00G 4GB
Crucial Technology BL8G26C16U4B.8FD 8GB
Report a bug
×
Bug description
Source link