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PNY Electronics PNY 2GB
AMD R744G2606U1S 4GB

PNY Electronics PNY 2GB vs AMD R744G2606U1S 4GB

Overall score
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score
star star star star star
AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

Differences Specifications Comments

Differences

PNY Electronics PNY 2GB Reasons to consider
PNY Electronics PNY 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 76
    Around 64% lower latency
AMD R744G2606U1S 4GB Reasons to consider
AMD R744G2606U1S 4GB
Report a bug
  • Faster reading speed, GB/s
    15.7 left arrow 13.8
    Average value in the tests
  • Faster write speed, GB/s
    8.7 left arrow 8.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
PNY Electronics PNY 2GB
AMD R744G2606U1S 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 76
  • Read speed, GB/s
    13.8 left arrow 15.7
  • Write speed, GB/s
    8.4 left arrow 8.7
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2274 left arrow 1809

PNY Electronics PNY 2GB RAM comparisons

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

AMD R744G2606U1S 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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