Samsung 1600 CL10 Series 8GB
Mushkin MES4S213FF16G28 16GB

Samsung 1600 CL10 Series 8GB vs Mushkin MES4S213FF16G28 16GB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Mushkin MES4S213FF16G28 16GB

Mushkin MES4S213FF16G28 16GB

Differences

  • Below the latency in the PassMark tests, ns
    25 left arrow 36
    Around 31% lower latency
  • Faster reading speed, GB/s
    16.1 left arrow 13.8
    Average value in the tests
  • Faster write speed, GB/s
    11.2 left arrow 10.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Mushkin MES4S213FF16G28 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 36
  • Read speed, GB/s
    16.1 left arrow 13.8
  • Write speed, GB/s
    10.1 left arrow 11.2
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 2550
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons