Samsung DDR3 8GB 1600MHz 8GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB

Samsung DDR3 8GB 1600MHz 8GB vs Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB

Overall score
star star star star star
Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Overall score
star star star star star
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB

Differences

  • Faster write speed, GB/s
    9.6 left arrow 8.9
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    23 left arrow 43
    Around -87% lower latency
  • Faster reading speed, GB/s
    16.6 left arrow 14.9
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    43 left arrow 23
  • Read speed, GB/s
    14.9 left arrow 16.6
  • Write speed, GB/s
    9.6 left arrow 8.9
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2506 left arrow 2631
RAM Latency Calculator
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