Samsung DDR3 8GB 1600MHz 8GB
Micron Technology CT8G4DFD8213.16FA2 8GB

Samsung DDR3 8GB 1600MHz 8GB vs Micron Technology CT8G4DFD8213.16FA2 8GB

Overall score
star star star star star
Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Overall score
star star star star star
Micron Technology CT8G4DFD8213.16FA2 8GB

Micron Technology CT8G4DFD8213.16FA2 8GB

Differences

  • Faster reading speed, GB/s
    14.9 left arrow 11.9
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    31 left arrow 43
    Around -39% lower latency
  • Faster write speed, GB/s
    10.2 left arrow 9.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology CT8G4DFD8213.16FA2 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    43 left arrow 31
  • Read speed, GB/s
    14.9 left arrow 11.9
  • Write speed, GB/s
    9.6 left arrow 10.2
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2506 left arrow 2585
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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