RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
20.5
Average value in the tests
Faster write speed, GB/s
2,123.3
16.2
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Report a bug
Below the latency in the PassMark tests, ns
18
59
Around -228% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
18
Read speed, GB/s
4,833.8
20.5
Write speed, GB/s
2,123.3
16.2
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
731
3564
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B2G70BH0-CK0 16GB
Kingmax Semiconductor GLMH23F-18MCIA------ 16GB
Samsung M3 78T2863EHS-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-2133C15-8GRK 8GB
Kingston 99U5595-005.A00LF 2GB
Corsair CMW64GX4M2E3200C16 32GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Mushkin 996902 2GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Kingston 9905471-071.A00LF 8GB
Crucial Technology BL8G32C16U4WL.M8FE 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
Kingston 9905624-014.A00G 4GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston 9905713-004.A00G 4GB
Kingston KVR800D2N6/2G 2GB
Mushkin MRA4S320GJJM32G 32GB
Kingston 99U5471-025.A00LF 4GB
Essencore Limited KD4AGSA8A-32N2200 16GB
Samsung M391B5673EH1-CH9 2GB
SK Hynix HMA82GS6AFRFR-UH 16GB
A-DATA Technology ADOVE1A0834E 1GB
Kingston 9905670-012.A00G 8GB
Kingston 9965662-016.A00G 16GB
G Skill Intl F4-3600C16-8GTZKK 8GB
Report a bug
×
Bug description
Source link