RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Team Group Inc. TEAMGROUP-D4-3866 4GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Team Group Inc. TEAMGROUP-D4-3866 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
21.6
Average value in the tests
Faster write speed, GB/s
2,123.3
18.6
Average value in the tests
Reasons to consider
Team Group Inc. TEAMGROUP-D4-3866 4GB
Report a bug
Below the latency in the PassMark tests, ns
17
59
Around -247% lower latency
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
17
Read speed, GB/s
4,833.8
21.6
Write speed, GB/s
2,123.3
18.6
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
731
3528
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Team Group Inc. TEAMGROUP-D4-3866 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T2863EHS-CF7 1GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BL16G32C16S4B.M16FE1 16GB
Kingston 9905403-061.A00LF 2GB
Kingston 9905598-039.A00G 16GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
V-GEN D4H8GS24A8 8GB
Crucial Technology CT2K102464BD160B 8GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT16G4SFRA266.M16FR 16GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMW16GX4M2D3000C16 8GB
Unifosa Corporation HU564404EP0200 4GB
Apacer Technology 78.B1GS6.AUC0B 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3466C16-4GVK 4GB
Unifosa Corporation HU564404EP0200 4GB
Kingston 9965596-035.B00G 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
Kingston 99U5584-001.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N
G Skill Intl F2-8500CL5-2GBPI 2GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Report a bug
×
Bug description
Source link