RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-4000C18-32GTZN 32GB
Compare
Samsung M378B5673EH1-CF8 2GB vs G Skill Intl F4-4000C18-32GTZN 32GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
G Skill Intl F4-4000C18-32GTZN 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
29
Around 3% lower latency
Reasons to consider
G Skill Intl F4-4000C18-32GTZN 32GB
Report a bug
Faster reading speed, GB/s
20.6
12.7
Average value in the tests
Faster write speed, GB/s
18.8
7.5
Average value in the tests
Higher memory bandwidth, mbps
21300
8500
Around 2.51 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-4000C18-32GTZN 32GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
29
Read speed, GB/s
12.7
20.6
Write speed, GB/s
7.5
18.8
Memory bandwidth, mbps
8500
21300
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1066 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1988
4112
Samsung M378B5673EH1-CF8 2GB RAM comparisons
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB
G Skill Intl F4-4000C18-32GTZN 32GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 2GB-DDR2 800Mhz 2GB
Kingston KF2666C15S4/8G 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Corsair CMW32GX4M4A2666C16 8GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3200C16-16GTZSK 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston 9965600-027.A00G 16GB
Samsung M3 78T3354BZ0-CCC 256MB
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
Samsung M391B5673EH1-CH9 2GB
Transcend Information JM2400HSB-8G 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFS8213.C8FBD1 8GB
Kingston 99U5469-045.A00LF 4GB
Apacer Technology 76.D305G.D390B 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3600C18-32GVK 32GB
SK Hynix HYMP512S64CP8-Y5 1GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Peak Electronics 256X64M-67E 2GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
Kingston 9905471-071.A00LF 8GB
Samsung M393A1G40DB0-CPB 8GB
Samsung M471B5273DH0-CH9 4GB
Hyundai Inc AR36C18S8K2HU416R 8GB
Report a bug
×
Bug description
Source link