RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M386B4G70DM0-CMA4 32GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Compare
Samsung M386B4G70DM0-CMA4 32GB vs Kingmax Semiconductor GLLF62F-C6---------- 4GB
Overall score
Samsung M386B4G70DM0-CMA4 32GB
Overall score
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M386B4G70DM0-CMA4 32GB
Report a bug
Reasons to consider
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
52
Around -126% lower latency
Faster reading speed, GB/s
17
9.7
Average value in the tests
Faster write speed, GB/s
13.2
7.2
Average value in the tests
Higher memory bandwidth, mbps
19200
14900
Around 1.29 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M386B4G70DM0-CMA4 32GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
52
23
Read speed, GB/s
9.7
17.0
Write speed, GB/s
7.2
13.2
Memory bandwidth, mbps
14900
19200
Other
Description
PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
9-10-9-28 / 1866 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2173
2935
Samsung M386B4G70DM0-CMA4 32GB RAM comparisons
Team Group Inc. Dark-1866 4GB
Mushkin 994104 8GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMD16GX4M4B3600C18 4GB
A-DATA Technology DDR3 1600 4GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Panram International Corporation D4U2666P-8G 8GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
G Skill Intl F4-4133C19-8GTZC 8GB
Kingston 9905403-156.A00LF 2GB
Patriot Memory (PDP Systems) 3600 C17 Series 4GB
Kingston 9965525-155.A00LF 8GB
Kingston ACR26D4U9S1KA-4 4GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3600C19-8GSXKB 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology 16A6A2G64HZ-2-2E1 16GB
Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HMA84GR7AFR4N-VK 32GB
Kingston 9905403-134.A00LF 2GB
G Skill Intl F4-2400C17-4GVR 4GB
Micron Technology 8KTF51264HZ-1G6D1 4GB
Kingston 9905734-003.A00G 32GB
Samsung DDR3 8GB 1600MHz 8GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL8G30C15U4B.M8FE 8GB
Report a bug
×
Bug description
Source link