Samsung M386B4G70DM0-CMA4 32GB
Micron Technology CT8G4DFD8213.16FA11 8GB

Samsung M386B4G70DM0-CMA4 32GB vs Micron Technology CT8G4DFD8213.16FA11 8GB

Overall score
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Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Overall score
star star star star star
Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Differences

  • Below the latency in the PassMark tests, ns
    28 left arrow 52
    Around -86% lower latency
  • Faster reading speed, GB/s
    12 left arrow 9.7
    Average value in the tests
  • Faster write speed, GB/s
    9.1 left arrow 7.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 14900
    Around 1.14 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M386B4G70DM0-CMA4 32GB
Micron Technology CT8G4DFD8213.16FA11 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    52 left arrow 28
  • Read speed, GB/s
    9.7 left arrow 12.0
  • Write speed, GB/s
    7.2 left arrow 9.1
  • Memory bandwidth, mbps
    14900 left arrow 17000
Other
  • Description
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    9-10-9-28 / 1866 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2173 left arrow 2347
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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