RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1K70CH0-CH9 8GB
Kingston HP26D4U9S8ME-8X 8GB
Compare
Samsung M393B1K70CH0-CH9 8GB vs Kingston HP26D4U9S8ME-8X 8GB
Overall score
Samsung M393B1K70CH0-CH9 8GB
Overall score
Kingston HP26D4U9S8ME-8X 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1K70CH0-CH9 8GB
Report a bug
Reasons to consider
Kingston HP26D4U9S8ME-8X 8GB
Report a bug
Below the latency in the PassMark tests, ns
30
44
Around -47% lower latency
Faster reading speed, GB/s
16.3
11.2
Average value in the tests
Faster write speed, GB/s
12.2
8.1
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1K70CH0-CH9 8GB
Kingston HP26D4U9S8ME-8X 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
44
30
Read speed, GB/s
11.2
16.3
Write speed, GB/s
8.1
12.2
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2293
3052
Samsung M393B1K70CH0-CH9 8GB RAM comparisons
EVGA 08G-D3-2133-MR 4GB
Elpida EBJ40UG8EFW0-GN-F 4GB
Kingston HP26D4U9S8ME-8X 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT42GR7AFR4A-PB 16GB
Crucial Technology CT8G4SFS8213.C8FBR1 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Transcend Information JM2666HSE-16G 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-2400C16-16GRS 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Samsung M471A2K43CB1-CRCR 16GB
Kingston K821PJ-MID 16GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
G Skill Intl F4-3600C18-16GVK 16GB
G Skill Intl F4-3200C18-16GRS 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
A-DATA Technology AO1P32NC8W1-BDZS 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Corsair CMK64GX4M4D3600C18 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3733C17-8GTZA 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Apacer Technology 78.DAGRL.4050C 16GB
Samsung M471B1G73DB0-YK0 8GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
Samsung M378B5173BH0-CH9 4GB
Asgard VMA42UH-MEC1U2AJ2 16GB
Patriot Memory (PDP Systems) PSD22G6672 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
Report a bug
×
Bug description
Source link